Engineering Purcell factor anisotropy for dark and bright excitons in two dimensional semiconductors

نویسندگان

چکیده

Abstract Tightly bound dark excitons in atomically thin semiconductors can be used for various optoelectronic applications including light storage and quantum communication. Their optical accessibility is however limited due to their out-of-plane transition dipole moment. We thus propose strengthen the coupling of two dimensional materials with resonant modes a cavity at room temperature, by engineering anisotropy Purcell factor. A silica micro-disk characterised high confinement small modal volume, Q -factor free spectral range couple monolayer metal dichalcogenides (TMDCs). show numerically that tapering sidewalls an extremely versatile route achieving selective whispering gallery emitted from dipoles detriment in-plane ones four representative TMDCs.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Multiband theory of quantum-dot quantum wells: Dark excitons, bright excitons, and charge separation in heteronanostructures

Electron, hole, and exciton states of multishell CdS/HgS/CdS quantumdot quantum well nanocrystals are determined by use of a multiband theory that includes valence-band mixing, modeled with a 6-band Luttinger-Kohn Hamiltonian, and nonparabolicity of the conduction band. The multiband theory correctly describes the recently observed dark-exciton ground state and the lowest, optically active, bri...

متن کامل

Time-Dependent Density-Functional Theory and Excitons in Bulk and Two-Dimensional Semiconductors

In this work, we summarize the recent progress made in constructing time-dependent density-functional theory (TDDFT) exchange-correlation (XC) kernels capable to describe excitonic effects in semiconductors and apply these kernels in two important cases: a “classic” bulk semiconductor, GaAs, with weakly-bound excitons and a novel two-dimensional material, MoS2, with very strongly-bound excitoni...

متن کامل

Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

Point defects in semiconductors can trap free charge carriers and localize excitons. The interaction between these defects and charge carriers becomes stronger at reduced dimensionalities, and is expected to greatly influence physical properties of the hosting material. We investigated effects of anion vacancies in monolayer transition metal dichalcogenides as two-dimensional (2D) semiconductor...

متن کامل

Two-dimensional semiconductors for transistors

| In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited by the rate at which heat, generated from static power, is dissipated. The increase in static power and the leakage of current between the source and drain electrodes that causes this increase, are referred ...

متن کامل

Two-dimensional snowflake trap for indirect excitons.

We present experimental proof of principle for two-dimensional electrostatic traps for indirect excitons. A confining trap potential for indirect excitons is created by a snowflake-shaped electrode pattern. We demonstrate collection of indirect excitons from all directions to the trap center and control of the trap potential by voltage.

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Physics D

سال: 2022

ISSN: ['1361-6463', '0022-3727']

DOI: https://doi.org/10.1088/1361-6463/ac570e